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반도체 MonolithIC 3D Inc v. OO hynix Inc 간의 특허 관련 특허 분쟁

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사건번호	2:25-cv-01167					발생일자	2025.11.26
법원국가	UNITED STATES OF AMERICA					관할법원명	D.C.E.D.Texas
침해권리	특허					산업분류	전기전자 > 반도체
소송유형	침해금지					분쟁결과(1심)	소취하 \| 판결일 : 2026.03.18
원고명	MonolithIC 3D Inc (미국 / NPE )
피고명	OO hynix Inc (한국 / 대기업 )
분쟁내용	[MonolithIC 3D Inc v. OO hynix Inc] 사건번호 2:25-cv-01167에 따르면 원고 MonolithIC 3D Inc은(는) 피고 OO hynix Inc을(를) 상대로 특허 US12035531\|US12125737\|US12243765\|US12369347\|US12376382\|US12469735을(를) 침해했다는 이유로 미국 텍사스 동부 지방법원에 소를 제기하였다.

계쟁특허 대표도면[US12035531]

계쟁제품

H5UG series, H5UG7HME03X020R HBM3, H5WR series, HBM2E, HBM3E

계쟁특허 정보

특허번호	특허명칭	국내패밀리 정보	국제특허분류(IPC)
US12035531	3D semiconductor device and structure with logic and memory		H10B 43/27 , H01L 23/528 H01L 27/02 , H01L 29/167 H01L 29/47 , H01L 29/78 H01L 29/792 , H10B 41/10 H10B 41/20 , H10B 43/10 H10B 43/20 , H10B 53/20
US12125737	3D semiconductor device and structure with metal layers and memory cells		H01L 21/683 , G11C 8/16 H01L 21/74 , H01L 21/762 H01L 21/768 , H01L 21/822 H01L 21/8238 , H01L 21/84 H01L 23/48 , H01L 23/525 H01L 27/02 , H01L 27/06 H01L 27/092 , H01L 27/10 H01L 27/105 , H01L 27/118 H01L 27/12 , H01L 29/423 H01L 29/66 , H01L 29/78 H01L 29/788 , H01L 29/792 H10B 10/00 , H10B 12/00 H10B 20/00 , H10B 41/20 H10B 41/40 , H10B 41/41 H10B 43/20 , H10B 43/40 H01L 23/00 , H01L 23/367 H01L 25/00 , H01L 25/065 H10B 20/20
US12243765	3D semiconductor device and structure with metal layers and memory cells		H01L 21/683 , G11C 8/16 H01L 21/74 , H01L 21/762 H01L 21/768 , H01L 23/48 H01L 23/525 , H10B 10/00 H10B 12/00 , H10B 20/00 H10B 20/25 , H10B 41/20 H10B 41/40 , H10B 41/41 H10B 43/20 , H10B 43/40 H10D 10/01 , H10D 30/01 H10D 30/60 , H10D 30/68 H10D 30/69 , H10D 64/01 H10D 64/27 , H10D 84/01 H10D 84/03 , H10D 84/85 H10D 84/90 , H10D 86/00 H10D 86/01 , H10D 88/00 H10D 89/10 , H01L 23/00 H01L 23/367 , H01L 25/00 H01L 25/065 , H10D 86/40 H10D 86/60
US12369347	3D semiconductor device and structure with metal layers and a power delivery path		H10D 30/60 , G11C 11/404 G11C 11/4097 , G11C 11/412 G11C 16/02 , G11C 16/04 H10B 10/00 , H10B 12/00 H10B 43/20 , H10B 63/00 H10B 69/00 , H10D 30/69
US12376382	3D semiconductor devices and structures with metal layers		H10D 88/00 , G03F 9/00 H01L 21/762 , H01L 21/768 H01L 23/367 , H01L 23/48 H01L 23/522 , H01L 23/528 H01L 23/532 , H01L 23/544 H10B 10/00 , H10B 12/00 H10B 20/00 , H10B 41/20 H10B 43/20 , H10D 10/01 H10D 10/40 , H10D 30/01 H10D 30/67 , H10D 30/83 H10D 30/87 , H10D 62/83 H10D 64/01 , H10D 84/01 H10D 84/03 , H10D 84/85 H10D 84/90 , H10D 86/00 H10D 86/01 , H10D 89/10 H01L 21/268 , H01L 23/00 H10D 84/83
US12469735	3D semiconductor device and structure with metal layers and memory cells		H01L 21/683 , G11C 8/16 H01L 21/74 , H01L 21/762 H01L 21/768 , H01L 23/48 H01L 23/525 , H10B 10/00 H10B 12/00 , H10B 20/00 H10B 20/25 , H10B 41/20 H10B 41/40 , H10B 41/41 H10B 43/20 , H10B 43/40 H10D 10/01 , H10D 30/01 H10D 30/60 , H10D 30/68 H10D 30/69 , H10D 64/01 H10D 64/27 , H10D 84/01 H10D 84/03 , H10D 84/85 H10D 84/90 , H10D 86/00 H10D 86/01 , H10D 88/00 H10D 89/10 , H01L 23/00 H01L 23/367 , H01L 25/00 H01L 25/065 , H10D 86/40 H10D 86/60

등록일자:2025-11-28